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品名：TaNiS5 晶體

制造方法：
 

化學(xué)氣相沉積法， Chemical Vapor Deposition （CVD）
 

產(chǎn)品簡介：

應(yīng)用領(lǐng)域：
 

光電器件，微電子器件，生物傳感，化學(xué)傳感等領(lǐng)域。

參考文獻
1， Sunshine, Steven A., and James A. Ibers. "Structure and physical properties of the new layered ternary chalcogenides tantalum nickel sulfide (Ta2NiS5) and tantalum nickel selenide (Ta2NiSe5)." Inorganic Chemistry 24.22 (1985): 3611-3614.
2，Di Salvo, F. J., et al. "Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5." Journal of the Less Common Metals 116.1 (1986): 51-61.
3， Larkin, T. I., et al. "Infrared phonon spectra of quasi-one-dimensional Ta 2 NiSe 5 and Ta 2 NiS 5." Physical Review B 98.12 (2018): 125113.
4， Yan, Bingzheng, et al. "Ternary chalcogenide Ta 2 NiS 5 as a saturable absorber for a 1.9 μm passively Q-switched bulk laser." Optics letters44.2 (2019): 451-454.

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