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產品概述/Product Introduction：

? PECVD主要應用于氧化硅(SiO?) 和氮化硅(SiN4) 材料的薄膜生長，工作原理是在低壓引入高頻射頻電源，采取電容耦合方式使工藝氣體電離放電，形成等離子體狀態，產生大量的活性基團，這些活性基團在襯底材料表面發生化學反應并沉積到襯底表面，生長出氧化硅(SiO?) 或氮化硅(SiN4) 薄膜

PECVD is mainly used for thin film growth of silicon oxide (SiO?) and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO?) or silicon nitride (SiN4) thin films.

產品特點/Product Characteristics：

? 成膜質量高

High film quality

? 體積小占地面積小，操作簡便

Small volume, small floor area and simple operation

? 具有良好的工藝性能，使用范圍廣泛

Has good process performance and wide application range