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產品特點/Product characteristics：

? 提供兩種工藝包

Two process packages are provided

①外形包:產出6英寸碳化硅(SiC) 單晶，外形不開裂

Shape package: 6-inch silicon carbide (SiC) single crystal is produced without cracking

②工藝包:晶型: 4H

Process package: Crystal form: 4H

電阻率:0.015~0.025ohm.cm

Resistivity: 0.015 ~ 0.025 ohm . cm

直徑:150.25士0.25mm

Diameter: 150.25士0.25 mm

厚度:≥10 (Figure 2) mm

Thickness:≥10 (Figure 2) mm

微管密度:≤3ea/cm2

Microtubule density:≤3 ea/cm2

TSD:≤1000ea/cm2

? 溫度**可達2400°C

Temperatures up to 2400°C